DocumentCode
858773
Title
A coplanar-to-microstrip transition for W-band circuit fabrication with 100- mu m-thick GaAs wafers
Author
Golja, B. ; Sequeira, H.B. ; Duncan, S. ; Mendenilla, G. ; Byer, N.E.
Volume
3
Issue
2
fYear
1993
Firstpage
29
Lastpage
31
Abstract
Results on a via-hole interconnect that links a coplanar waveguide (CPW) on one side of a 100 mu m-thick GaAs substrate to a microstrip line on the opposite side are presented. The measured insertion loss of a pair of back-to-back connections is 0.3 dB between 26.5 and 40 GHz. A lumped-element equivalent circuit of this via-hole interconnect has been extrapolated to W-band and used to design amplifiers at 94 GHz.<>
Keywords
MMIC; equivalent circuits; microstrip components; microwave amplifiers; 0.3 dB; 26.5 to 40 GHz; 94 GHz; CPW; EHF; GaAs substrate; GaAs wafers; MM-wave type; amplifiers; back-to-back connections; coplanar waveguide; coplanar-to-microstrip transition for W-band circuit fabrication; insertion loss; lumped-element equivalent circuit; via-hole interconnect; Coplanar waveguides; FETs; Fabrication; Frequency; Gallium arsenide; Inductance; Integrated circuit interconnections; MMICs; Microstrip; Sputter etching;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.196031
Filename
196031
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