Title :
A 0.5-W complementary AlGaAs-GaAs HBT push-pull amplifier at 10 GHz
Author :
Tserng, Hua Quen ; Hill, Darrell G. ; Kim, Tae Seung
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Abstract :
X-band high-efficiency complementary push-pull amplifiers using P-n-p and N-p-n AlGaAs-GaAs HBTs were demonstrated. One of the amplifiers achieved an output power of 500 mW with 6-dB gain and 41.8% power-added efficiency at 10 GHz. High efficiency was achieved by Class-B push-pull operation, which also results in second harmonic cancellation.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; solid-state microwave circuits; 10 GHz; 41.8 percent; 500 mW; 6 dB; AlGaAs-GaAs; Class-B; HBT push-pull amplifier; SHF; X-band; complementary; second harmonic cancellation; Doping; Fingers; Heterojunction bipolar transistors; High power amplifiers; Microwave amplifiers; Microwave circuits; Microwave devices; Microwave frequencies; Operational amplifiers; Power amplifiers;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
