Title :
Performances of a frequency-locked 1.3 μm DFB laser under 50 Mbit/s FSK modulation
Author :
Chung, Y.C. ; Tkach, R.W. ; Chraplyvy, A.R. ; Roxlo, C.B.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
9/1/1988 12:00:00 AM
Abstract :
A GaInAsP DFB laser modulated with a 50 Mbit/s pseudo-random AMI FSK signal was locked to the 2p10-3d5 transition of argon at 1.2960 μm using the optogalvanic effect. No significant degradation in frequency stability due to the modulation was observed. When the signal was demodulated, the power penalty due to the frequency-locking servo loop was found to be less than 1/3 dB
Keywords :
III-V semiconductors; argon; distributed feedback lasers; frequency shift keying; gallium arsenide; gallium compounds; indium compounds; laser frequency stability; optical communication equipment; optogalvanic spectra; semiconductor junction lasers; synchronisation; 0.3333 dB; 1.2960 micron; 1.3 micron; 50 Mbit/s; AMI FSK signal; DFB laser; FSK modulation; GaInAsP; alternate mark inversion FSK; frequency locked laser; frequency stability; frequency-locking servo loop; optogalvanic effect; power penalty; pseudorandom signal; semiconductors;
Journal_Title :
Electronics Letters
