Effect of Structures of NiFe-Based Free Layers on Writing Properties in Toggle MRAMs

Author

Fukumoto, Yoshiyuki ; Kasai, Naoki

Author_Institution

Syst. Devices Res. Labs., NEC Corp., Kanagawa

Volume

43

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

2343

Lastpage

2345

Abstract

The toggle writing of NiFe-based free layers grown on amorphous-AlO and MgO(001) barriers was investigated. The polycrystalline orientation was shown to explain behaviors of the saturation and spin-flop fields and their thermal endurances. To obtain small variations of these with high thermal robustness, a fully promoted NiFe(111)/Ru(001) orientation was important

Keywords

antiferromagnetic materials; crystal orientation; iron alloys; magnetic storage; magnetic structure; magnetic tunnelling; nickel alloys; random-access storage; ruthenium; tantalum; AlO; MgO; NiFe-Ru-NiFe; NiFe-Ta-NiFe; NiFe-based free layers; polycrystalline orientation; saturation fields; spin-flop fields; thermal endurances; toggle magnetic random access memories; toggle writing; Antiferromagnetic materials; Automatic frequency control; Iron; Magnetic anisotropy; Magnetic tunneling; Magnetostriction; Perpendicular magnetic anisotropy; Robustness; Saturation magnetization; Writing; AlO; MTJ; MgO; NiFe; orientation; synthetic antiferromagnet (SAF); toggle MRAM; writing field;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2007.893522

Filename

4202723