Title :
Effect of Structures of NiFe-Based Free Layers on Writing Properties in Toggle MRAMs
Author :
Fukumoto, Yoshiyuki ; Kasai, Naoki
Author_Institution :
Syst. Devices Res. Labs., NEC Corp., Kanagawa
fDate :
6/1/2007 12:00:00 AM
Abstract :
The toggle writing of NiFe-based free layers grown on amorphous-AlO and MgO(001) barriers was investigated. The polycrystalline orientation was shown to explain behaviors of the saturation and spin-flop fields and their thermal endurances. To obtain small variations of these with high thermal robustness, a fully promoted NiFe(111)/Ru(001) orientation was important
Keywords :
antiferromagnetic materials; crystal orientation; iron alloys; magnetic storage; magnetic structure; magnetic tunnelling; nickel alloys; random-access storage; ruthenium; tantalum; AlO; MgO; NiFe-Ru-NiFe; NiFe-Ta-NiFe; NiFe-based free layers; polycrystalline orientation; saturation fields; spin-flop fields; thermal endurances; toggle magnetic random access memories; toggle writing; Antiferromagnetic materials; Automatic frequency control; Iron; Magnetic anisotropy; Magnetic tunneling; Magnetostriction; Perpendicular magnetic anisotropy; Robustness; Saturation magnetization; Writing; AlO; MTJ; MgO; NiFe; orientation; synthetic antiferromagnet (SAF); toggle MRAM; writing field;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2007.893522
