Title :
Small-signal impedance of GaAs-AlxGa1-xAs resonant tunnelling heterostructures at microwave frequency
Author :
Lippens, Didier ; Mounaix, Patrick
Author_Institution :
Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´Ascq
fDate :
9/1/1988 12:00:00 AM
Abstract :
The microwave impedance of high current drivability GaAs-Alx Ga1-xAs resonant tunnelling heterostructures in negative differential resistance conditions is measured. Using an equivalent circuit model that accounts for the frequency variation of the impedance, circuit elements corresponding to physical phenomena present in the device are identified
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; semiconductor device models; semiconductor junctions; solid-state microwave devices; tunnel diodes; GaAs-AlxGa1-xAs; SHF; circuit elements; equivalent circuit model; frequency variation; high current drivability; microwave frequency; microwave impedance; negative differential resistance; resonant tunnelling heterostructures; tunnel diodes;
Journal_Title :
Electronics Letters
