DocumentCode :
859019
Title :
A 1-17-GHz InGaP-GaAs HBT MMIC analog multiplier and mixer with broad-band input-matching networks
Author :
Tzeng, Bosen ; Lien, Chun-Hsien ; Wang, Huei ; Wang, Yu-Chi ; Chao, Pane-Chane ; Chen, Chung-Hsu
Author_Institution :
MedTek Inc., Hsin-Chu, Taiwan
Volume :
50
Issue :
11
fYear :
2002
fDate :
11/1/2002 12:00:00 AM
Firstpage :
2564
Lastpage :
2568
Abstract :
An InGaP-GaAs heterojunction bipolar transistor (HBT) analog multiplier/mixer monolithic microwave integrated circuit (MMIC) is developed that adopts a Gilbert-cell multiplier with broad-band input-matching networks to widen the bandwidth up to 17 GHz. This MMIC was fabricated using a commercially available 6-in InGaP-GaAs HBT MMIC process. It achieved a measured sensitivity of above 1100 V/W for an analog multiplier and a conversion gain of better than 9 dB for a mixer. It also demonstrated a lower corner frequency and noise than that of an InP HBT analog multiplier. The measured low-frequency noise was 10 nV/sqrt(Hz), which is about half of that of an InP HBT analog multiplier with a similar architecture. The corner frequency of the low-frequency noise was roughly estimated to be 15 kHz. The measured performance of this MMIC chip with gain-bandwidth-product (GBP) of 47 GHz rivals that of the reported GaAs-based analog multipliers and mixers. The high GBP result achieved by this chip is attributed to the HBT device performance and the broad-band input-matching network.
Keywords :
III-V semiconductors; MMIC mixers; analogue multipliers; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; impedance matching; indium compounds; integrated circuit noise; 1 to 17 GHz; 15 kHz; 6 in; 9 dB; Gilbert cell; InGaP-GaAs; InGaP-GaAs HBT MMIC chip; analog mixer; analog multiplier; broadband input matching network; conversion gain; corner frequency; gain-bandwidth product; low-frequency noise; sensitivity; Analog integrated circuits; Bipolar integrated circuits; Frequency estimation; Gain measurement; Heterojunction bipolar transistors; Indium phosphide; Low-frequency noise; MMICs; Microwave integrated circuits; Semiconductor device measurement;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2002.804506
Filename :
1046030
Link To Document :
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