Temperature and carrier injection-dependent characteristics of bulk unipolar (barrier) switches

The current/voltage characteristics of two-state homojunction barrier devices between 270 K and 330 K were investigated. Two new gated regenerative switching devices (the gated camel switch and the gated p plane barrier switch) and introduced for the first time. Carrier injection-dependent operational parameters, including switching voltage V_SW, switching current density J _SW, holding voltage V_H and holding current density J_H were studied. It is found that with increasing the injected electron or hole current density, V_SW decreases while J_SW increases. The two holding point parameters V_H and J_H remain constant over the carrier injection range. A comparison between theoretical and available experimental results is also presented