Temperature and carrier injection-dependent characteristics of bulk unipolar (barrier) switches

Author

Al-Bustani, A.

Author_Institution

Sch. of Electr. & Electron. Eng., Lancashire Polytech., Preston

Volume

24

Issue

18

fYear

1988

fDate

9/1/1988 12:00:00 AM

Firstpage

1185

Lastpage

1187

Abstract

The current/voltage characteristics of two-state homojunction barrier devices between 270 K and 330 K were investigated. Two new gated regenerative switching devices (the gated camel switch and the gated p plane barrier switch) and introduced for the first time. Carrier injection-dependent operational parameters, including switching voltage V_SW, switching current density J _SW, holding voltage V_H and holding current density J_H were studied. It is found that with increasing the injected electron or hole current density, V_SW decreases while J_SW increases. The two holding point parameters V_H and J_H remain constant over the carrier injection range. A comparison between theoretical and available experimental results is also presented

Keywords

semiconductor device models; semiconductor switches; 270 to 330 C; barrier switches; bulk unipolar switches; carrier injection-dependent characteristics; current/voltage characteristics; experimental results; gated camel switch; gated p plane barrier switch; gated regenerative switching devices; holding current density; holding voltage; switching current density; switching voltage; temperature dependent characteristics; two-state homojunction barrier devices;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

19624