Title :
Observation of intrinsic bistability in resonant tunnelling devices
Author :
Alves, E.S. ; Eaves, L. ; Henini, M. ; Hughes, O.H. ; Leadbeater, M.L. ; Hill, Graeme ; Pate, M.A.
Author_Institution :
Dept. of Phys., Nottingham Univ.
fDate :
9/1/1988 12:00:00 AM
Abstract :
Reports the first unambiguous observation of intrinsic bistability due to space charge build-up in an asymmetric GaAs/(AlGa)As double-barrier resonant tunnelling device
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; tunnel diodes; GaAs-AlGaAs; asymmetric devices; double-barrier resonant tunnelling device; intrinsic bistability; resonant tunnelling devices; space charge build-up;
Journal_Title :
Electronics Letters
