• DocumentCode
    859088
  • Title

    Observation of intrinsic bistability in resonant tunnelling devices

  • Author

    Alves, E.S. ; Eaves, L. ; Henini, M. ; Hughes, O.H. ; Leadbeater, M.L. ; Hill, Graeme ; Pate, M.A.

  • Author_Institution
    Dept. of Phys., Nottingham Univ.
  • Volume
    24
  • Issue
    18
  • fYear
    1988
  • fDate
    9/1/1988 12:00:00 AM
  • Firstpage
    1190
  • Lastpage
    1191
  • Abstract
    Reports the first unambiguous observation of intrinsic bistability due to space charge build-up in an asymmetric GaAs/(AlGa)As double-barrier resonant tunnelling device
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; tunnel diodes; GaAs-AlGaAs; asymmetric devices; double-barrier resonant tunnelling device; intrinsic bistability; resonant tunnelling devices; space charge build-up;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    19627
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=859088