DocumentCode
859169
Title
Large signal mwSPICE model of DMOS transistor
Author
Conn, D.R. ; Smith, P.M.
Author_Institution
McMaster Univ., Hamilton, Ont., Canada
Volume
25
Issue
1
fYear
1989
Firstpage
8
Lastpage
9
Abstract
A new large signal mwSPICE model is presented for the DMOS device. The model describes the device accurately in all regions of operation, and can be scaled with respect to gate width and length. Predicted DC, small and large signal RF performances are in good agreement with measured values.
Keywords
insulated gate field effect transistors; solid-state microwave devices; DC modelling; DMOS device; DMOS transistor; all regions of operation; gate width; large signal RF performances; large signal model; scaling;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890006
Filename
19633
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