Title :
Transport and Magneto-Transport Characteristics of Fe
O
/GaAs Hybrid Structure
Author :
Hassan, Sameh S A ; Xu, Y.B. ; Ahmad, Ehsan ; Lu, Yongxiong
Author_Institution :
Dept. of Electron., York Univ.
fDate :
6/1/2007 12:00:00 AM
Abstract :
We have investigated the transport and magneto-transport characteristics of magnetite (Fe3O4) thin films deposited on top of GaAs (100). The magnetoresistance has been measured in both the longitudinal and the transverse directions, and the results show that magnetoresistance of the thin Fe3O4 films is due to anisotropic magnetoresistance (AMR) and there is no evidence of anti-phase boundaries from the magnetoresistance measurements. The current-voltage (I-V) characteristics across the interface have been measured to explore the nature of the magnetite/GaAs contact, and the results show typical characteristics of Schottky barrier contact with a moderate barrier height of 0.34 eV, which might favour high efficient spin injection from the half metallic magnetite into GaAs for spintronic applications
Keywords :
III-V semiconductors; Schottky barriers; enhanced magnetoresistance; ferrimagnetic materials; gallium arsenide; iron compounds; magnetic thin films; Fe3O4-GaAs; Fe3O4-GaAs hybrid structure; GaAs; GaAs(100) surface; Schottky barrier contact; anisotropic magnetoresistance; current-voltage characteristics; longitudinal direction; magnetite thin films; magnetotransport characteristics; spin injection; transport characteristics; transverse direction; Anisotropic magnetoresistance; Current measurement; Gallium arsenide; Iron; Magnetic anisotropy; Magnetoelectronics; Perpendicular magnetic anisotropy; Schottky barriers; Spin polarized transport; Sputtering; I-V characteristics; Anisotropic magnetoresistance; Schottky barrier height; half-metal; magnetite; molecular beam epitaxy; spintronics;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2007.892176