DocumentCode
859301
Title
Novel measurement method of linewidth enhancement factor in semiconductor lasers by optical self-locking
Author
Shin, C.H. ; Teshima, M. ; Ohtsu, M.
Author_Institution
Tokyo Inst. of Technol., Kanagawa, Japan
Volume
25
Issue
1
fYear
1989
Firstpage
27
Lastpage
28
Abstract
The authors propose a simple, accurate and novel method to measure the value of the linewidth enhancement factor in semiconductor lasers. It utilises the asymmetry of the frequency locking range of a semiconductor laser with the optical feedback from the external CFP cavity. The measured value for a 0.8 mu m CSP-type AlGaAs laser was 3.07+or-0.26, which showed good agreement with those measured by other conventional methods.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser frequency stability; optical variables measurement; semiconductor junction lasers; AlGaAs laser; external CFP cavity; frequency locking range asymmetry; linewidth enhancement factor; measurement method; optical feedback; optical self-locking; semiconductor lasers; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890019
Filename
19646
Link To Document