DocumentCode :
859301
Title :
Novel measurement method of linewidth enhancement factor in semiconductor lasers by optical self-locking
Author :
Shin, C.H. ; Teshima, M. ; Ohtsu, M.
Author_Institution :
Tokyo Inst. of Technol., Kanagawa, Japan
Volume :
25
Issue :
1
fYear :
1989
Firstpage :
27
Lastpage :
28
Abstract :
The authors propose a simple, accurate and novel method to measure the value of the linewidth enhancement factor in semiconductor lasers. It utilises the asymmetry of the frequency locking range of a semiconductor laser with the optical feedback from the external CFP cavity. The measured value for a 0.8 mu m CSP-type AlGaAs laser was 3.07+or-0.26, which showed good agreement with those measured by other conventional methods.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser frequency stability; optical variables measurement; semiconductor junction lasers; AlGaAs laser; external CFP cavity; frequency locking range asymmetry; linewidth enhancement factor; measurement method; optical feedback; optical self-locking; semiconductor lasers; semiconductors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890019
Filename :
19646
Link To Document :
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