Title :
Maskless selective diffusion of Si into GaAs
Author :
Shieh, C.L. ; Mantz, J. ; Kohn, E.
Author_Institution :
Siemens Res. & Technol. Labs., Princeton, NJ, USA
Abstract :
A maskless selective diffusion of silicon into GaAs is achieved by the selective modification of the GaAs surface using low energy Ar sputtering. The Ga rich surface resulting from the Ar sputtering prevents the diffusion of silicon into GaAs.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor doping; semiconductor technology; silicon; sputtering; Ga rich surface; GaAs:Si; low energy Ar sputtering; maskless selective diffusion; selective modification of GaAs surface; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890023
