• DocumentCode
    859335
  • Title

    Maskless selective diffusion of Si into GaAs

  • Author

    Shieh, C.L. ; Mantz, J. ; Kohn, E.

  • Author_Institution
    Siemens Res. & Technol. Labs., Princeton, NJ, USA
  • Volume
    25
  • Issue
    1
  • fYear
    1989
  • Firstpage
    32
  • Lastpage
    33
  • Abstract
    A maskless selective diffusion of silicon into GaAs is achieved by the selective modification of the GaAs surface using low energy Ar sputtering. The Ga rich surface resulting from the Ar sputtering prevents the diffusion of silicon into GaAs.
  • Keywords
    III-V semiconductors; gallium arsenide; semiconductor doping; semiconductor technology; silicon; sputtering; Ga rich surface; GaAs:Si; low energy Ar sputtering; maskless selective diffusion; selective modification of GaAs surface; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890023
  • Filename
    19650
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=859335