DocumentCode
859369
Title
Butt coupled photodiodes integrated with Y-branched optical waveguides on InP
Author
Doldissen, W. ; Fiedler, Fine ; Kaiser, Rene ; Morl, L.
Author_Institution
Heinrich Hertz Inst. fur Nachrichtentech. Berlin GmbH, West Germany
Volume
25
Issue
1
fYear
1989
Firstpage
35
Lastpage
37
Abstract
A pair of GaInAs photodiodes was integrated to the output waveguides of an optical Y-branch. Light was butt coupled to the photodetective zone which was formed by GaInAs LPE growth refilling deep etched holes. Total light conversion with more than 90% internal quantum efficiency at 1.55 mu m wavelength was achieved. The best diodes exhibited dark currents of 1 nA at -10 V bias voltage.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; liquid phase epitaxial growth; optical communication equipment; optical waveguides; photodiodes; semiconductor technology; substrates; -10 V; 1 nA; 1.55 micron; 90 percent; GaInAs LPE growth refilling deep etched holes; GaInAs photodiodes; InP substrate; OEICs; Y-branched optical waveguides; bias voltage; butt coupled photodiodes; dark currents; internal quantum efficiency; optical Y-branch; photodetective zone; photodiodes integration to waveguides; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890026
Filename
19653
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