Title :
Monolithic InP/GaInAs pinFET receiver using MOMBE-grown crystal
Author :
Akahori, Y. ; Hata, Satoshi ; Ikeda, Makoto ; Yuda, M. ; Kawaguchi, Yuki ; Uehara, Satoshi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
An InP/GaInAs monolithic pinFET is fabricated using MOMBE crystal growth and Be ion implantation techniques. The MOMBE crystal growth technique is shown to be adaptable to the versatile requirements of the receiver crystal. The epigrowth together with the Be ion implantation provides a promising OEIC fabrication technique. The pinFET operated with 1.3 GHz bandwidth and 6 dB gain.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; ion implantation; molecular beam epitaxial growth; optical communication equipment; p-i-n diodes; receivers; 1.3 GHz; 6 dB; Be ion implantation; InP-GaInAs; MOMBE crystal growth technique; MOMBE-grown crystal; OEIC fabrication technique; bandwidth; epigrowth; gain; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890027
