Title :
GaAs single-quantum well GRIN-SCH ridge lasers grown on InP by MOVPE
Author :
Ackaert, A. ; Moerman, I. ; Lootens, Didier ; Demeester, Piet ; Van Daele, Peter ; Baets, Roel ; Lagasse, P.
Abstract :
In this letter, lasing action of GaAs graded index separate confinement heterostructure single-quantum well lasers grown by MOVPE on InP substrates is reported. Stripe lasers without facet coating show a room temperature threshold current down to 54 mA under pulsed condition. The differential quantum efficiency attains 20% per facet but preliminary aging measurements indicate a short lifetime.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor technology; substrates; vapour phase epitaxial growth; 54 mA; GaAs-InP; aging measurements; differential quantum efficiency; pulsed condition; room temperature threshold current; semiconductor; short lifetime; stripe lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890034
