• DocumentCode
    859465
  • Title

    GaAs single-quantum well GRIN-SCH ridge lasers grown on InP by MOVPE

  • Author

    Ackaert, A. ; Moerman, I. ; Lootens, Didier ; Demeester, Piet ; Van Daele, Peter ; Baets, Roel ; Lagasse, P.

  • Volume
    25
  • Issue
    1
  • fYear
    1989
  • Firstpage
    47
  • Lastpage
    48
  • Abstract
    In this letter, lasing action of GaAs graded index separate confinement heterostructure single-quantum well lasers grown by MOVPE on InP substrates is reported. Stripe lasers without facet coating show a room temperature threshold current down to 54 mA under pulsed condition. The differential quantum efficiency attains 20% per facet but preliminary aging measurements indicate a short lifetime.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor technology; substrates; vapour phase epitaxial growth; 54 mA; GaAs-InP; aging measurements; differential quantum efficiency; pulsed condition; room temperature threshold current; semiconductor; short lifetime; stripe lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890034
  • Filename
    19661
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=859465