• DocumentCode
    859618
  • Title

    Multilayer Y-Ba-Cu-O structures using ion-assisted intermediate layers

  • Author

    Reade, R.P. ; Berdahl, P. ; Russo, R.E. ; Schaper, L.W.

  • Author_Institution
    Lawrence Berkeley Lab., CA, USA
  • Volume
    5
  • Issue
    2
  • fYear
    1995
  • fDate
    6/1/1995 12:00:00 AM
  • Firstpage
    2007
  • Lastpage
    2010
  • Abstract
    Multilayer thin films of YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) were deposited in situ on yttria-stabilized zirconia (YSZ) and CeO/sub 2/ intermediate layers grown using ion-assisted pulsed-laser deposition. These structures were grown on amorphous SiO/sub 2/ dielectric layers. A critical current density of 3/spl times/10/sup 5/ A/cm/sup 2/ was obtained for a YBCO film grown on SiO/sub 2/-coated Haynes Alloy 230 substrate. Improvement of the critical current density was obtained below 77 K by doping the YBCO with 10% Ag. Angular magnetoresistance measurements provide further information about the texture of this film.<>
  • Keywords
    barium compounds; critical current density (superconductivity); high-temperature superconductors; magnetoresistance; pulsed laser deposition; superconducting thin films; vapour deposited coatings; yttrium compounds; 77 K; Ag doping; SiO/sub 2/; SiO/sub 2/-coated Haynes Alloy 230; YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta//; YBa/sub 2/Cu/sub 3/O/sub 7/-CeO/sub 2/-ZrO/sub 2/:Y/sub 2/O/sub 3/; YBaCuO:Ag; amorphous SiO/sub 2/ dielectric layers; angular magnetoresistance; critical current density; film texture; high temperature superconductors; ion-assisted intermediate layers; ion-assisted pulsed-laser deposition; multilayer YBaCuO structures; multilayer thin films; yttria-stabilized zirconia; Amorphous materials; Critical current density; Current measurement; Density measurement; Dielectric substrates; Doping; Magnetoresistance; Nonhomogeneous media; Sputtering; Yttrium barium copper oxide;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/77.402980
  • Filename
    402980