DocumentCode
85969
Title
GaAs p-i-n Photodiode Array on GaP Using Wafer Fusion
Author
Mathur, Vaibhav ; Vangala, Shivashankar
Author_Institution
Axsun Technol., Inc., Billerica, MA, USA
Volume
27
Issue
5
fYear
2015
fDate
March1, 1 2015
Firstpage
466
Lastpage
469
Abstract
In this letter, we describe a novel wafer fusion process for transferring GaAs p-i-n junctions onto a GaP handle substrate. A process for patterning large arrays (30×30) of these photodiodes using a wet etch scheme is presented. We also present photoresponse characteristics of these diodes both with and without the high temperature wafer fusion process. Application of this device in an optically addressed adaptive optics system is also discussed.
Keywords
III-V semiconductors; adaptive optics; gallium arsenide; p-i-n photodiodes; GaAs; GaAs p-i-n photodiode array; GaP; GaP handle substrate; optically addressed adaptive optics system; photoresponse characteristics; wafer fusion; wet etch scheme; Adaptive optics; Arrays; Gallium arsenide; P-i-n diodes; PIN photodiodes; Substrates; MEMS; Photodiodes; Wafer fusion; adaptive optics; photodiodes;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2014.2377234
Filename
6980231
Link To Document