DocumentCode
85977
Title
Enhancing Phase Purity of CSD Bi-2223 Thin Films Through Protected Sintering Method
Author
Shutong Deng ; Timing Qu ; Rui Bao ; Guan Lin ; Yanqing Li ; Rui Liu ; Zhenghe Han
Author_Institution
Dept. of Phys., Tsinghua Univ., Beijing, China
Volume
25
Issue
3
fYear
2015
fDate
Jun-15
Firstpage
1
Lastpage
4
Abstract
Pure Bi2Sr2Ca2Cu3Ox (Bi-2223) phase is hard to be achieved in Bi-2223 thin films fabricated by using chemical solution deposition (CSD) due to the volatilization of specific elements. Two protected sintering methods were proposed in this work to enhance the phase purity of CSD Bi-2223 thin films. One method is two deposited thin films stacked “face-to-face” (FTF) and then sintered. A “substrate/precursor film/precursor film/substrate” architecture was used during sintering instead of common “precursor film/substrate” architecture. The other method was named “sealed face-to-face” (SFTF). The FTF structure was buried in Bi-2223 powders and then sealed in a silver envelope before sintering. Different sintering temperature and sintering time were investigated in an 8% O2 (N 2 balance) atmosphere. The volume fraction of Bi-2223 phase could be enhanced to 17% by using the FTF method, and 68% by using the SFTF method.
Keywords
bismuth compounds; calcium compounds; high-temperature superconductors; liquid phase deposition; powder technology; sintering; strontium compounds; superconducting thin films; vaporisation; Bi2Sr2Ca2Cu3Ox; CSD Bi-2223 thin films; FTF method; SFTF method; chemical solution deposition; enhancing phase purity; film-precursor architecture; film-substrate architecture; phase purity; protected sintering method; sealed face-face structure; specific elements; substrate-precursor architecture; volatilization; volume fraction; Bismuth; Films; Lead; Powders; Silver; Substrates; Temperature measurement; Bi-2223; chemical solution deposition; high-temperature superconducting thin films; phase purity;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2014.2378993
Filename
6980450
Link To Document