Title :
A 175-MV multiply-accumulate unit using an adaptive supply voltage and body bias architecture
Author :
Kao, James T. ; Miyazaki, Masayuki ; Chandrakasan, Anantha P.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
fDate :
11/1/2002 12:00:00 AM
Abstract :
In order to minimize total active power consumption in digital circuits, one must take into account subthreshold leakage currents that grow exponentially as technology scales. This research develops a theoretical model to predict how dynamic power and subthreshold power must be balanced to give an optimal VDD/Vt operating point that minimizes total active power consumption for different workload and operating conditions. A 175-mV multiply-accumulate test chip using a triple-well technology with tunable supply and body bias values is measured to experimentally verify the tradeoffs between the various sources of power. The test chip shows that there is an optimum VDD/Vt operating point, although it differs from the theoretical limit because of excessive forward bias currents. Finally, we propose a preliminary automatic supply and body biasing architecture (ASB) that automatically configures a circuit to operate with the lowest possible active power consumption.
Keywords :
CMOS digital integrated circuits; adders; digital arithmetic; digital signal processing chips; leakage currents; low-power electronics; multiplying circuits; parallel processing; voltage control; 175 mV; DSP core; MAC units; accumulator; active power consumption; array multiplier; digital circuits; dynamic power; dynamic voltage scaling; multiply-accumulate test chip; multiply-accumulate unit; operating conditions; optimal operating point; ripple carry adder; subthreshold leakage currents; subthreshold power; theoretical model; triple-well technology; tunable body bias values; tunable supply values; workload conditions; CMOS technology; Digital circuits; Dynamic voltage scaling; Energy consumption; Integrated circuit technology; Laboratories; Leakage current; Subthreshold current; Switching circuits; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.803957