Title :
Molecular dynamics simulations of direct reactive ion etching: surface roughening of silicon by chlorine
Author :
Barone, M.E. ; Robinson, T.0. ; Graves, D.B.
Author_Institution :
Coll. of Chem., California Univ., Berkeley, CA, USA
fDate :
2/1/1996 12:00:00 AM
Abstract :
During plasma etching, surfaces can become roughened because of a variety of mechanisms. One source of roughness is illustrated with molecular dynamics simulations of reactive ion etching of a silicon surface with 25-eV Cl+. The three-dimensional (3-D) image of the chlorinated surface and near-surface region is illustrated
Keywords :
chlorine; ions; molecular dynamics method; positive ions; silicon; sputter etching; surface topography; 25 eV; Cl; Cl+; Si; direct reactive ion etching; molecular dynamics simulations; near-surface region; plasma etching; semiconductor; surface roughening; three-dimensional image; Atomic layer deposition; Atomic measurements; Etching; Plasma chemistry; Plasma simulation; Rough surfaces; Silicon; Surface cracks; Surface roughness; Visualization;
Journal_Title :
Plasma Science, IEEE Transactions on
