• DocumentCode
    860057
  • Title

    InSb n-channel enhancement mode MISFET grown by molecular beam epitaxy

  • Author

    Ashley, T. ; Dean, A.B. ; Elliott, C.T. ; McConville, C.F. ; Whitehouse, C.R.

  • Author_Institution
    R. Signals & Radar Establ., Malvern, UK
  • Volume
    25
  • Issue
    4
  • fYear
    1989
  • Firstpage
    289
  • Lastpage
    290
  • Abstract
    InSb n-channel enhancement mode MISFETs have been fabricated in homoepitaxial material grown by molecular beam epitaxy. Silicon doping during growth of the epitaxial layers was used to form the source and drain junctions. The output characteristics are of the classical type, with a maximum gm of 12 mS/mm, corresponding to a surface electron mobility of 3-4*104 cm2/Vs at liquid nitrogen temperature.
  • Keywords
    III-V semiconductors; indium antimonide; infrared detectors; insulated gate field effect transistors; molecular beam epitaxial growth; semiconductor growth; 12 mS; III-V semiconductors; IR detector; InSb:Si; MBE; MISFET; enhancement mode; fabrication; homoepitaxial material; molecular beam epitaxy; n-channel;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890201
  • Filename
    19718
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=860057