DocumentCode
860133
Title
Negative differential resistance in InP JFETs
Author
Kruppa, W. ; Boos, J. Brad
Author_Institution
George Mason Univ., Fairfax, VA, USA
Volume
25
Issue
5
fYear
1989
fDate
3/2/1989 12:00:00 AM
Firstpage
299
Lastpage
301
Abstract
Negative differential resistance, as evidenced by DC and microwave measurements, has been observed in InP JFETs for a range of channel geometries and bias values. These results, adjusted for possible substrate current, are shown to be consistent with the simple theory of stationary Gunn domain formation.
Keywords
III-V semiconductors; indium compounds; junction gate field effect transistors; negative resistance; JFETs; bias values; channel geometries; microwave measurements; negative differential resistance; stationary Gunn domain formation; substrate current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890209
Filename
19727
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