Title :
Negative differential resistance in InP JFETs
Author :
Kruppa, W. ; Boos, J. Brad
Author_Institution :
George Mason Univ., Fairfax, VA, USA
fDate :
3/2/1989 12:00:00 AM
Abstract :
Negative differential resistance, as evidenced by DC and microwave measurements, has been observed in InP JFETs for a range of channel geometries and bias values. These results, adjusted for possible substrate current, are shown to be consistent with the simple theory of stationary Gunn domain formation.
Keywords :
III-V semiconductors; indium compounds; junction gate field effect transistors; negative resistance; JFETs; bias values; channel geometries; microwave measurements; negative differential resistance; stationary Gunn domain formation; substrate current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890209
