Title :
Comments on "A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs"
Author :
Kaija, Tero ; Heino, P.
Author_Institution :
Inst. of Electron., Tampere Univ. of Technol., Finland
fDate :
3/1/2006 12:00:00 AM
Abstract :
For original article by Ming-Hsiang Cho et al. see ibid., vol.53, no.9, p.2926-34, Sep. 2005.
Keywords :
MOSFET; S-parameters; microwave measurement; multiport networks; semiconductor device measurement; semiconductor device testing; silicon; Si; deep-submicrometer MOSFET; dummy fixture set; microwave on-wafer characterization; scattering parameters; shield-based three-port de-embedding method; test fixture set; Bars; Fixtures; Insertion loss; Loss measurement; MOSFET circuits; Microwave measurements; Microwave theory and techniques; Microwave transistors; Silicon; Testing; De-embedding; MOSFET; microwave measurements; scattering parameters;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2006.869701
