Title :
InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
Author :
Hooper, S.E. ; Kauer, M. ; Bousquet, V. ; Johnson, K. ; Barnes, J.M. ; Heffernan, J.
Author_Institution :
Sharp Labs. of Eur. Ltd., Oxford, UK
Abstract :
The first InGaN multiple quantum well laser diodes produced by molecular beam epitaxy are reported. Ridge waveguide lasers have been demonstrated at room temperature under pulsed current injection conditions. The lasers emit at a wavelength of approximately 400 nm with a spectral line-width of less than 0.2 nm, and a threshold current density of ∼30 kA cm-2.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; optical fabrication; photolithography; quantum well lasers; sputter etching; waveguide lasers; wide band gap semiconductors; 400 nm; InGaN; blue-violet laser diodes; high quality devices; molecular beam epitaxy; multiple quantum well laser diodes; photolithographic processing; plasma etching; pulsed current injection conditions; ridge waveguide lasers; room temperature; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040015
