Title :
Monolithic integration of a waveguide InGaAs/InP pin photodiode with a locally ion implanted JFET for receiver OEIC applications
Author :
Bauer, J.G. ; Lauterbach, C. ; Römer, D. ; Emeis, N. ; Hoffmann, Lionel ; Ebbinghaus, G.
Author_Institution :
Siemens Res. Labs., Munchen, Germany
fDate :
2/1/1993 12:00:00 AM
Abstract :
The device fabrication for a monolithic integration of a waveguide (WG), a photodiode (PD) and a junction field-effect transistor (JFET) in the InGaAs/InP material system is described. In an optimised WG/PD layer sequence, grown by metal organic vapour-phase epitaxy (MOVPE), JFETs have been realised using local Si and Be ion implantations. The JFETs (1.5 μm×200 μm) have a maximum transconductance of 160 mS/mm and a cutoff frequency of 12 GHz. The PDs are vertically coupled to the InGaAsP WG by evanescent field coupling. They show a low dark current of 3 nA and a 3 dB bandwidth of 5 GHz at -10 V bias. With the presented layer structure, a transimpedance receiver OEIC with monolithically integrated WG has been realised. The receiver sensitivity is -27.3 dBm at a BER of 10-9 for 400 Mbit/s data rate
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; ion implantation; optical receivers; optical waveguides; optical workshop techniques; p-i-n photodiodes; semiconductor growth; sensitivity; vapour phase epitaxial growth; -10 V; 1.5 micron; 12 GHz; 200 micron; 3 nA; 400 Mbit/s; 5 GHz; Be ion implantations; InGaAs-InP:Si,Be; MOVPE; cutoff frequency; device fabrication; evanescent field coupling; junction field-effect transistor; layer sequence; locally ion implanted JFET; low dark current; maximum transconductance; metal organic vapour-phase epitaxy; monolithic integration; optical waveguides; pin photodiode; receiver OEIC applications; receiver sensitivity; semiconductors; transimpedance receiver OEIC; vertically coupled;
Journal_Title :
Optoelectronics, IEE Proceedings J
