Title :
Electric-Pulse-Induced Resistance Switching in Magnetoresistive Manganite Films Grown by Metalorganic Chemical Vapor Deposition
Author :
Nakamura, Toshihiro ; Homma, Kohei ; Tai, Ryusuke ; Nishio, Akira ; Tachibana, Kunihide
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ.
fDate :
6/1/2007 12:00:00 AM
Abstract :
Pr1-xCaxMnO3 (PCMO) films with the desired atomic composition were deposited at low temperature (480 degC) by metalorganic chemical vapor deposition (MOCVD) using in situ infrared spectroscopic monitoring. The electric-pulse-induced resistance switching was observed in PCMO-based devices with various kinds of metal electrodes. The resistance change was dependent on the Ca/(Pr+Ca) composition ratio of the films and the kind of the metal electrodes. Various resistance states for the multilevel data storage application were observed, depending on polarity and voltage of applied pulses
Keywords :
MOCVD coatings; calcium compounds; colossal magnetoresistance; infrared spectra; magnetic thin films; magnetoresistive devices; praseodymium compounds; random-access storage; 480 degC; MOCVD; PCMO-based devices; Pr1-alphaCaalphaMnO3; atomic composition; composition ratio; electric-pulse-induced resistance switching; in situ infrared spectroscopy; magnetoresistive manganite films; metal electrodes; metalorganic chemical vapor deposition; multilevel data storage; resistance states; Atomic layer deposition; Chemical vapor deposition; Electric resistance; Electrodes; Infrared spectra; Infrared surveillance; MOCVD; Magnetic switching; Magnetoresistance; Temperature; Colossal magnetoresistance; manganite perovskite; resistance random access memory (ReRAM); resistance switching;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2007.893115
