Title :
Simple reliable processing technique for low-threshold high-power strained InGaAs-AlGaAs GRINSCH SQW laser diodes
Author :
Vermaerke, F. ; Moerman, I. ; Vermeire, G. ; Buydens, L. ; Van Daele, P. ; Demeester, P.
Author_Institution :
Lab. of Electromagn. & Acoust., Gent Univ., Belgium
fDate :
2/1/1993 12:00:00 AM
Abstract :
A simple and highly reliable processing technique for ridge waveguide InGaAs/GaAs SQW lasers is proposed. Comparison is made with other more conventional processing sequences and measurements show that the characteristics of the lasers obtained by this simple method are at least as good as and sometimes better than those made by the other processing sequences. It is shown that the simplicity of the process guarantees a high yield. The high performances of these lasers are further optimised by the application of optical coatings
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical workshop techniques; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; GRINSCH SQW laser diodes; InGaAs-AlGaAs; MOCVD semiconductor growth; SQW lasers; high performances; high yield; low-threshold high-power; optical coatings; optimisation; reliable processing technique; ridge waveguide; strained semiconductor lasers;
Journal_Title :
Optoelectronics, IEE Proceedings J
