Simple reliable processing technique for low-threshold high-power strained InGaAs-AlGaAs GRINSCH SQW laser diodes

Author

Vermaerke, F. ; Moerman, I. ; Vermeire, G. ; Buydens, L. ; Van Daele, P. ; Demeester, P.

Author_Institution

Lab. of Electromagn. & Acoust., Gent Univ., Belgium

Volume

140

Issue

1

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

75

Lastpage

79

Abstract

A simple and highly reliable processing technique for ridge waveguide InGaAs/GaAs SQW lasers is proposed. Comparison is made with other more conventional processing sequences and measurements show that the characteristics of the lasers obtained by this simple method are at least as good as and sometimes better than those made by the other processing sequences. It is shown that the simplicity of the process guarantees a high yield. The high performances of these lasers are further optimised by the application of optical coatings

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical workshop techniques; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; GRINSCH SQW laser diodes; InGaAs-AlGaAs; MOCVD semiconductor growth; SQW lasers; high performances; high yield; low-threshold high-power; optical coatings; optimisation; reliable processing technique; ridge waveguide; strained semiconductor lasers;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

Filename

197400