Carrier-carrier scattering effects in InGaAs-GaAs strained layer lasers

Author

Rees, P. ; Hamilton, R.A.H. ; Blood, P. ; Burke, S.V.

Author_Institution

Dept. of Phys. & Astron., Univ. of Wales, Coll. of Cardiff, UK

Volume

140

Issue

1

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

80

Lastpage

83

Abstract

The authors have calculated the gain-current characteristics of a 70 A In_0.2Ga_0.8As-GaAs strained layer quantum well laser assuming strict k-selection and including spectral broadening due to carrier-carrier interactions at high carrier densities. The broadening lifetime, which is dependent upon energy and carrier density, has been calculated from first principles using an intraband Auger-type process. The effect of both electron-electron and hole-hole scattering has been included in the calculation of this lifetime. The paper compares the effect on the gain-current characteristics of the energy dependent lifetime and of a constant lifetime of 10^-13 s used typically in other calculations

Keywords

III-V semiconductors; carrier density; carrier lifetime; gallium arsenide; indium compounds; laser theory; semiconductor lasers; spectral line breadth; InGaAs-GaAs; broadening lifetime; carrier density; carrier-carrier interactions; carrier-carrier scattering; constant lifetime; electron-electron scattering; energy dependent lifetime; gain-current characteristics; high carrier densities; intraband Auger-type process; quantum well laser; spectral broadening; strained layer lasers; strict k-selection;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

Filename

197401