Title :
Electrical studies of tellurium films
Author :
Swan, R. ; Ray, A.K. ; Hogarth, C.A. ; Mukherjee, Dipankar
Author_Institution :
Dept. of Electr. & Electron Eng., South Bank Polytech., London, UK
Abstract :
In situ DC measurements made on 50 nm-thick tellurium films sandwiched between copper electrodes show an existence of ohmic contacts at the metal/semiconductor interface. Conduction in the polycrystalline film at higher fields is believed to be due to space-charge-limited current flow.
Keywords :
amorphous semiconductors; copper; electrical conductivity of amorphous semiconductors and insulators; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; high field effects; ohmic contacts; semiconductor thin films; semiconductor-metal boundaries; space-charge-limited conduction; tellurium; 50 nm; Cu electrodes; Cu-Te-Cu; DC measurements; Te films; amorphous films; elemental semiconductors; higher fields; metal/semiconductor interface; ohmic contacts; polycrystalline film; space-charge-limited current flow;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890975
