Thin Film Microtransformer Integrated on Silicon for Signal Isolation

Author

Wang, Ningning ; Donnell, Terence O. ; Roy, Saibal ; Kulkarni, Santosh ; McCloskey, Paul ; Mathuna, Cian O.

Author_Institution

Tyndall Nat. Inst., Cork

Volume

43

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

2719

Lastpage

2721

Abstract

Microtransformers have been fabricated on silicon substrates with the aim of providing isolation for signal and power. Interleaved primary and secondary windings are sandwiched between two electroplated magnetic layers. The transformer has a turn ratio of 4:4. It has a primary inductance of 400 nH at low frequencies and dc resistance of 0.48 Omega. The voltage gain is -1 dB between 1-20 MHz with a 50-Omega load. When compared to previously reported microtransformer characteristics this is the highest reported voltage gain for a microtransformer

Keywords

magnetic multilayers; micromechanical devices; power transformers; silicon; transformer windings; -1 dB; 0.48 ohm; 1 to 20 MHz; 50 ohm; electroplated magnetic layers; primary windings; secondary windings; signal isolation; silicon substrates; thin film microtransformer; Coils; Fabrication; Frequency; Magnetic anisotropy; Magnetic cores; Magnetic flux; Perpendicular magnetic anisotropy; Power transformers; Semiconductor thin films; Silicon; High frequency; integrated circuits; isolation technology; power transformers; signals;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2007.892593

Filename

4202864