Magnetoresistance Characterization of NiFe Films With a Planar Point Contact

Author

Ohsawa, Yuichi

Author_Institution

Corporate R&D Center, Toshiba Corp, Kawasaki

Volume

43

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

3007

Lastpage

3009

Abstract

Magnetoresistance (MR) characterization of NiFe films was performed with a point-contact (PC) whose size was varied from several hundreds to around ten nm² by the ion milling process. Two kinds of MR origin, which were estimated to be domain wall MR (DWMR) and anisotropic MR (AMR), were observed by analytical decomposition of the R-H curves. The MRs showed contrastive dependence on the PC conductance due to difference of area in which they occurred. The DWMR in the PC increased as the PC size decreased and reached to a maximum of about 12.5%. The DWMR dependence on the NiFe-PC size coincided with that of fitting approximation based on some previous reports

Keywords

Permalloy; enhanced magnetoresistance; ferromagnetic materials; magnetic domain walls; magnetic thin films; NiFe; NiFe films; Permalloy; domain wall; ion milling; magnetic confinement; magnetoresistance; planar point contact; Anisotropic magnetoresistance; Etching; Fabrication; Magnetic domain walls; Magnetic films; Milling; Optical films; Scanning electron microscopy; Testing; Transmission electron microscopy; Magnetic confinement; magnetic domains; magnetoresistance; permalloy films;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2007.892179

Filename

4202866