DocumentCode :
860603
Title :
Alkali ion doping of silicon
Author :
McCaldin, J.O.
Volume :
52
Issue :
3
fYear :
1964
fDate :
3/1/1964 12:00:00 AM
Firstpage :
301
Lastpage :
302
Keywords :
Anodes; Capacitance; Current density; Doping; Ionization; Niobium; P-n junctions; Silicon; Space charge; Tunneling;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1964.2875
Filename :
1444805
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=860603
