Title :
Conceptual design of advanced inductively coupled plasma etching tools using computer modeling
Author :
Collison, Wenli Z. ; Kushner, Mark J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
2/1/1996 12:00:00 AM
Abstract :
Inductively coupled plasma (ICP) reactors for semiconductor etching are attractive in that the location of plasma generation and the plasma density can be controlled by placement of the inductive coils. This feature has been used to perform a conceptual design of an ICP etching tool having two plasma sources which provide additional control over the magnitude and composition of the reactive fluxes to the wafer. Images of plasma properties in the reactor are presented
Keywords :
plasma density; plasma production; semiconductor process modelling; sputter etching; computer modeling; etching tools; inductive coils; inductively coupled plasma reactors; plasma density; plasma generation; plasma properties imaging; plasma sources; reactive fluxes; semiconductor etching; Argon; Coils; Etching; Inductors; Plasma applications; Plasma confinement; Plasma density; Plasma sources; Semiconductor device modeling; Spirals;
Journal_Title :
Plasma Science, IEEE Transactions on