Title :
Implantation-enhanced oxidation of tantalum for capacitor structures
Author :
Mohammed, M.A. ; Morgan, D.V. ; Nobes, M.
Author_Institution :
Sch. of Electr., Electron. & Syst. Eng., Univ. of Wales Coll. of Cardiff, UK
fDate :
3/2/1989 12:00:00 AM
Abstract :
The authors investigate the enhanced thermal oxidation of tantalum using oxygen-ion implantation. A comparison of the electrical and dielectric properties is made between the oxygen-implanted thermal oxides and of those fabricated without implantation. The ion-implanted tantalum-oxide films are shown to be superior to the unimplanted layers for the fabrication of oxide capacitors.
Keywords :
capacitors; dielectric properties of solids; dielectric thin films; electronic conduction in insulating thin films; integrated circuit technology; ion implantation; oxidation; tantalum; tantalum compounds; O ion implantation; Ta-Ta 2O 5; capacitor structures; dielectric properties; electrical properties; enhanced thermal oxidation; fabrication; integrated circuits; oxide capacitors; semiconductor IC; thermal oxides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890229
