Title :
Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates
Author :
Lee, J.-W. ; Kumar, V. ; Schwindt, R. ; Kuliev, A. ; Birkhahn, R. ; Gotthold, D. ; Guo, S. ; Albert, B. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Abstract :
High-performance, low-noise AlGaN/GaN high electron mobility transistors (HEMTs) with 0.25 μm gate-length have been fabricated on semi-insulating 6H-SiC substrates. The devices exhibited a unity current gain cutoff frequency (fT) of 52.3 GHz, and maximum frequency of oscillation (fMAX) of 112 GHz. At 10 GHz, a minimum noise figure (NFmin) of 0.75 dB and an associated gain (Ga) of 10.84 dB was obtained when biased at VDS=10 V and IDS=40.6 mA/mm. The corresponding values were 1.15 and 7.49 dB at 18 GHz. These results are the first reported microwave noise characteristics obtained from 0.25 μm gate-length GaN HEMTs on 6H-SiC substrates. The use of 6H-SiC substrates provides an alternative solution to the full commercialisation of GaN-based technologies for low-noise and high-power electronics.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; semiconductor device noise; silicon compounds; wide band gap semiconductors; 10 GHz; 112 GHz; 52.3 GHz; AlGaN-GaN; NP5 noise parameter test set; SiC; high current density; high-performance low-noise HEMT; maximum frequency of oscillation; microwave noise performances; peak extrinsic transconductance; semi-insulating substrates; unity current gain cutoff frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040012
