Title :
Double and triple charge pump for power IC: ideal dynamical models to an optimised design
Author :
Di Cataldo, G. ; Palumbo, G.
Author_Institution :
Dipartimento Elettrico, Elettronico e Sistemistico, Catania Univ., Italy
fDate :
2/1/1993 12:00:00 AM
Abstract :
The authors propose an optimised design methodology for the double and triple optimised charge pump. The circuits discussed give an output voltage greater than the supply voltage and are commonly used in power IC or memory to allow the switching on of a MOS device. The theoretical models of charge pumps in the transient region are reported to obtain better knowledge of the circuits and the optimised design
Keywords :
MOS integrated circuits; power integrated circuits; power supply circuits; transient response; MOS device switching; chip voltage supply; double charge pump; ideal dynamical models; optimised design methodology; power IC; transient region; triple charge pump;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
