SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion

Author

Wernersson, L.-E. ; Kabeer, S. ; Zela, V. ; Lind, E. ; Zhang, J. ; Seifert, W. ; Kosel, T. ; Seabaugh, A.

Author_Institution

Dept. of Electr. Eng., Univ. of Notre Dame, IN, USA

Volume

40

Issue

1

fYear

2004

Firstpage

83

Lastpage

85

Abstract

A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p⁺-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n⁺-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si_0.74Ge_0.26, showing a peak current density of 0.18 kA/cm² and a current peak-to-valley ratio of 2.6 at room temperature.

Keywords

Ge-Si alloys; chemical vapour deposition; diffusion; phosphorus; rapid thermal annealing; semiconductor doping; tunnel diodes; Esaki tunnel diodes; Si_0.74Ge_0.26:P; SiGe:P; cross-sectional transmission electron microscopy; current-voltage characteristics; degenerate doping levels; peak current density; phosphorous diffusion; proximity rapid thermal diffusion; pseudomorphic film; reactive ion etching; spike anneal; structural quality; ultrahigh vacuum chemical vapour deposition;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20040048

Filename

1260692