• DocumentCode
    860862
  • Title

    GaInAs camel transistors grown by MOCVD

  • Author

    Marso, M. ; Zwinge, G. ; Beneking, H.

  • Author_Institution
    Inst. of Semicond. Electron., Aachen Tech. Univ., West Germany
  • Volume
    25
  • Issue
    21
  • fYear
    1989
  • Firstpage
    1462
  • Lastpage
    1463
  • Abstract
    Hot electron camel transistors have been fabricated for the first time in GaInAs. The camel structures were grown by MOCVD. The thickness of the base layer is 40 nm, the emitter barrier height is 0.55 eV, the collector barrier height is 0.25 eV, and the base transport factor is 0.6 at room temperature.
  • Keywords
    III-V semiconductors; gallium arsenide; hot electron transistors; indium compounds; semiconductor growth; vapour phase epitaxial growth; 0.25 eV; 0.55 eV; GaInAs; HET; III-V semiconductors; MOCVD; camel transistors; collector barrier height; emitter barrier height; hot electron device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890976
  • Filename
    46243
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=860862