مرکز منطقه ای اطلاع رساني علوم و فناوري - Improved Electrical Properties of Ge p-MOSFET With <formula formulatype="inline"> <img src="/images/tex/710.gif" alt=" \\hbox {HfO}_{2}"> </formula> Gate Dielectric by Using <formula formulatype="inline"> <img src="/images/tex/18645.gif" alt="\\hbox {TaO}

Title :

Improved Electrical Properties of Ge p-MOSFET With $\\hbox {HfO}_{2}$ Gate Dielectric by Using $\\hbox {TaO}</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Xu, J.P. ; Zhang, X.F. ; Li, C.X. ; Lai, P.T. ; Chan, C.L.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>29</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2008</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1155</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1158</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>The electrical characteristics of germanium p-metal-oxide-semiconductor (p-MOS) capacitor and p-MOS field-effect transistor (FET) with a stack gate dielectric of HfO<sub>2</sub>/TaO<i>x</i>N<i>y</i> are investigated. Experimental results show that MOS devices exhibit much lower gate leakage current than MOS devices with only HfO<sub>2</sub> as gate dielectric, good interface properties, good transistor characteristics, and about 1.7-fold hole-mobility enhancement as compared with conventional Si p-MOSFETs. These demonstrate that forming an ultrathin passivation layer of TaO<i>x</i>N<i>y</i> on germanium surface prior to deposition of high-<i>k</i> dielectrics can effectively suppress the growth of unstable GeO<i>x</i>, thus reducing interface states and increasing carrier mobility in the inversion channel of Ge-based transistors.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOS capacitors; MOSFET; elemental semiconductors; germanium; hafnium compounds; hole mobility; leakage currents; passivation; silicon; tantalum compounds; Ge-HfO<sub>2</sub>-TaO<sub>x</sub>N<sub>y</sub>; Si; carrier mobility; germanium p-metal-oxide-semiconductor capacitor; germanium surface; high-k dielectrics; hole mobility; interface states; lower-gate leakage current; p-MOSFET; stack gate dielectrics; transistor; ultrathin passivation layer; Germanium; TaON interlayer; high-$k$; high-<formula formulatype=$ $k$; pMOSFET;