Low-voltage transient bipolar effect induced by dynamic floating-body charging in scaled PD/SOI MOSFETs

Author

Pelella, M.M. ; Fossum, J.G. ; Dongwook Suh ; Krishnan, S. ; Jenkins, K.A. ; Hargrove, M.J.

Author_Institution

Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA

Volume

17

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

196

Lastpage

198

Abstract

An increased significance of the parasitic bipolar transistor (BJT) in scaled floating-body partially depleted SOI MOSFETs under transient conditions is described. The transient parasitic BJT effect is analyzed using both simulations and high-speed pulse measurements of pass transistors in a sub-0.25 μm SOI technology. The transient BJT current can be significant even at low drain-source voltages, well below the device breakdown voltage, and does not scale with technology. Our analysis shows that it can be problematic in digital circuit operation, possibly causing write disturbs in SRAMs and decreased retention times for DRAMs. Proper device/circuit design, suggested by our analysis, can however control the problems.

Keywords

MOSFET; silicon-on-insulator; transient analysis; 0.25 micron; DRAM; SRAM; digital circuit; dynamic floating-body charging; high-speed pulse measurement; low-voltage transient bipolar transistor; parasitic BJT current; pass transistor; scaled partially depleted SOI MOSFET; simulation; Analytical models; Bipolar transistors; Breakdown voltage; Circuit simulation; Circuit synthesis; Digital circuits; Low voltage; MOSFETs; Pulse measurements; Transient analysis;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.491827

Filename

491827