Comparison of time-to-failure of GeSi and Si bipolar transistors

Author

Neugroschel, A. ; Sah, Chih-Tang ; Ford, J.M. ; Steele, J. ; Tang, R. ; Stein, C.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

Volume

17

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

211

Lastpage

213

Abstract

The effects of Ge in the epitaxial-base on the reliability of Si/Ge/sub x/Si/sub 1-x//Si heterojunction bipolar transistors were investigated. The ten-year time-to-failure under emitter-base junction reverse-bias stress was measured at the designed operation voltage by the current-acceleration method and compared to that of Si bipolar junction transistors with no Ge (x=0). The investigation shows that the Ge incorporated by the reduced pressure chemical vapor deposition epitaxial technology to give the ramp-type Ge profile has no adverse effects on the transistor reliability.

Keywords

Ge-Si alloys; bipolar transistors; doping profiles; elemental semiconductors; failure analysis; heterojunction bipolar transistors; life testing; semiconductor device reliability; semiconductor materials; silicon; vapour phase epitaxial growth; Si; Si BJT; Si-GeSi-Si; Si/Ge/sub x/Si/sub 1-x//Si HBT; bipolar junction transistors; chemical vapor deposition; current-acceleration method; emitter-base junction reverse-bias stress; epitaxial-base; heterojunction bipolar transistors; ramp-type Ge profile; reduced pressure CVD epitaxial technology; reliability test; time-to-failure; transistor reliability; Acceleration; Bipolar transistors; Circuits; Current measurement; Extrapolation; Germanium silicon alloys; Silicon germanium; Stress; Time measurement; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.491832

Filename

491832