High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base

Author

Ahmari ; Fresina ; Hartmann ; Barlage ; Mares ; Feng ; Stillman

Author_Institution

Microelectron. Lab., Illinois Univ., Urbana, IL, USA

Volume

17

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

226

Lastpage

228

Abstract

A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded In/sub x/Ga/sub 1-x/As base has been demonstrated with f/sub T/=83 GHz and f/sub max/=197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT´s. The graded base, which improves electron transport through the base, results in a DC current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high f/sub max/ results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT´s in high-speed microwave applications.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; 197 GHz; 83 GHz; EHF; InGaAs-InGaP-GaAs; SHF; compositionally graded base; cutoff frequency; electron transport; heavily doped base; heterojunction bipolar transistor; high-speed HBT; high-speed microwave applications; self-aligned HBT; self-aligned base contacts; self-aligned collector etch; strained In/sub x/Ga/sub 1-x/As base; Cutoff frequency; Electrons; Etching; Gallium arsenide; Heterojunction bipolar transistors; Indium; Manufacturing; Microwave devices; Performance gain; Photonic band gap;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.491837

Filename

491837