Reduced temperature processing of YSZ buffer layers for HTSC transition edge bolometers

Using the steep change in the resistance at the superconducting transition edge a sensitive and spectral broadband membrane type bolometric detector prototype was developed. Response S, noise equivalent power NEP and the time constant /spl tau/ were examined. Employing inhibit technology and prefabrication of silicon membranes, the developed process sequence clearly separates the fabrication into silicon processing technology and commonly explored HT/sub c/-superconductor deposition with impact on cost effective future batch fabrication. Buffer layer epitaxy at reduced deposition temperature improves production yield (membranes!) and a recently developed passivation technique saves process steps. Applying the maximum bias current the bolometer prototypes already reveal detectivities in excess of 1/spl times/10/sup 8/ [cm Hz/sup 1/2/ W/sup -1/] and a time constant of the order of milliseconds.<>