DocumentCode
861167
Title
Low-threshold GaInAsP bridge-contacted planar buried-ridge structure lasers
Author
Thulke, W. ; Zach, Armin
Author_Institution
Siemens AG Res. Labs., Munchen, West Germany
Volume
25
Issue
5
fYear
1989
fDate
3/2/1989 12:00:00 AM
Firstpage
366
Lastpage
367
Abstract
A new type of GaInAsP/InP buried-heterostructure laser, the bridge-contacted planar buried-ridge structure (BC-PBRS) laser, is reported. Current confinement is obtained by reducing the effective area of the forward-biased pn homojunctions at both sides of the active region. Owing to the self-aligning process technique, the lateral InP confining layer widths are highly controllable and reproducible. Threshold currents of 10 mA and maximum operation temperatures exceeding 100 degrees C are achieved in the 1.3 mu m wavelength region.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; 1.3 micron; 10 mA; 100 C; GaInAsP-InP lasers; bridge-contacted planar buried-ridge structure lasers; buried-heterostructure laser; lateral InP confining layer; low threshold; maximum operation temperatures; self-aligning process technique; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890254
Filename
19772
Link To Document