DocumentCode
861215
Title
Correlation of tunnelling currents and tunable luminescence in selectively diffused nipi LEDs
Author
Ackley, D.E. ; Mantz, J. ; Lee, H. ; Nouri, N. ; Cheponis, R. ; Shieh, C.-L.
Author_Institution
Siemens Res. & Technol. Labs., Princeton, NJ, USA
Volume
25
Issue
9
fYear
1989
fDate
4/27/1989 12:00:00 AM
Firstpage
560
Lastpage
561
Abstract
Measurements of the current/voltage characteristics and electroluminescence spectra of nipi LEDs with selectively diffused contacts have been performed over the temperature range 3-300 K. Good correlation has been observed between the forward characteristics of the diodes and the tuning of the electroluminescence. Analysis of the I/V characteristics indicates that the recombination occurs by electron tunnelling through the parabolic potential barriers.
Keywords
electroluminescence; light emitting diodes; semiconductor superlattices; tunnelling; 3 to 300 K; current/voltage characteristics; doping superlattices; electroluminescence spectra; electron tunnelling; forward characteristics; parabolic potential barriers; selectively diffused n-i-p-i LED; tunable luminescence; tunnelling currents;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890382
Filename
19779
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