DocumentCode
861255
Title
Bulk silicon technology for complementary MESFETs
Author
Magnusson, U. ; Tiren, J. ; Soderbarg, A. ; Rosling, M. ; Grelsson, O. ; Bleichner, H. ; Nylander, J.O. ; Berg, Skyler
Author_Institution
Dept. of Electron., Inst. of Technol., Uppsala Univ., Sweden
Volume
25
Issue
9
fYear
1989
fDate
4/27/1989 12:00:00 AM
Firstpage
565
Lastpage
566
Abstract
A technology for fabrication of complementary silicon MESFETs on bulk silicon substrates has been developed. The technology is similar to CMOS technology, and utilises n-silicon substrates. P-wells are used for the n-channel devices. Device isolation was achieved by trench etching. The silicides of Er and Pt were used as gate Schottky contacts. P- and n-channel characteristics are presented together with subthreshold behaviour and preliminary results regarding radiation hardness. Also, results from two-dimensional simulations of the devices are presented.
Keywords
Schottky gate field effect transistors; integrated circuit technology; radiation hardening (electronics); semiconductor technology; silicon; ErSi 2-Si; PtSi-Si; bulk Si technology; complementary MESFETs; device isolation; gate Schottky contacts; n-channel devices; p-wells; radiation hardness; subthreshold behaviour; trench etching; two-dimensional simulations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890385
Filename
19782
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