Title :
Pinch off in insulated-gate field-effect transistors
Author :
Goldberg, C. ; Heiman, F.P.
Author_Institution :
Westinghouse Research Lab., Pittsburgh, Pa.
fDate :
4/1/1964 12:00:00 AM
Keywords :
Electrons; FETs; Insulation; Silicon; Space charge; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1964.2938
