DocumentCode
861300
Title
Temperature, bandgap-wavelength, and doping dependence off peak-gain coefficient parabolic model parameters for InGaAsP/InP semiconductor laser diodes
Author
Ghafoori-Shiraz, H.
Author_Institution
Dept. of Electron. & Electr. Eng., Birmingham Univ., UK
Volume
6
Issue
4
fYear
1988
fDate
4/1/1988 12:00:00 AM
Firstpage
500
Lastpage
506
Abstract
Varying temperature and doping types were used in both 1.3-μm- and 1.55-μm-band-wavelength laser diodes to determine the dependence of the parameters in a parabolic model on each of these factors. The parameters were calculated by using the least-mean-square method to fit the results of the exact solution. Results are presented in graphical and tabular form
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.3 micron; 1.55 micron; InGaAsP-InP; bandgap-wavelength; doping dependence; doping types; laser diodes; least-mean-square method; peak-gain coefficient parabolic model parameters; semiconductor laser diodes; temperature; Charge carrier density; Diode lasers; Gain measurement; Indium phosphide; Laser theory; Peak to average power ratio; Semiconductor device doping; Semiconductor lasers; Semiconductor process modeling; Temperature dependence;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.4031
Filename
4031
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