Title :
Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD
Author :
Zhao Jun Liu ; Tongde Huang ; Jun Ma ; Chao Liu ; Kei May Lau
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
Monolithic integration of high-performance AlGaN/GaN high-electron mobility transistors (HEMTs) and blue light emitting diodes (LEDs) on sapphire substrates has been demonstrated by metal organic chemical vapor deposition selective growth technique. The integrated HEMT-LED exhibits a peak transconductance (Gm) of 244 mS/mm, a maximum drain current (Id) of 920 mA/mm, and an ON-resistance (Ron) of 2.6 Ω·mm. The forward voltage (VF) of the LED is 3.1 V under an injection current of 10 mA. The integrated LED emits modulated light power efficiently at a wavelength of 470 nm by a serially connected GaN HEMT, showing potential applications such as solid-state lighting, displays, and visible light communications.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; high electron mobility transistors; light emitting diodes; sapphire; wide band gap semiconductors; AlGaN-GaN; HEMT-LED; MOCVD; blue LED; blue light emitting diodes; current 10 mA; forward voltage; high-electron mobility transistors; maximum drain current; metal organic chemical vapor deposition; monolithic integration; peak transconductance; sapphire substrates; selective growth technique; solid-state lighting; visible light communications; voltage 3.1 V; wavelength 470 nm; Aluminum gallium nitride; Gallium nitride; HEMTs; Light emitting diodes; Logic gates; MOCVD; Substrates; AlGaN/GaN; high electron mobility transistor (HEMT); light emitting diode (LED); metal organic chemical vapor deposition (MOCVD);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2300897
