• DocumentCode
    861362
  • Title

    Novel strained quantum well laser grown by MOVPE

  • Author

    Westbrook, Lamar ; Hatch, C.B. ; Wilkie, J.H.

  • Volume
    25
  • Issue
    9
  • fYear
    1989
  • fDate
    4/27/1989 12:00:00 AM
  • Firstpage
    578
  • Lastpage
    580
  • Abstract
    Strained-layer broad-area lasers have been grown by MOVPE. The structures contain 3.5 nm-wide Ga0.3In0.7As quantum wells. They emit close to 1.5 mu m and have been made to lase under current injection. These structures were compared with similar lasers containing unstrained 7.0 nm-wide Ga0.47In0.53As quantum wells also emitting at 1.5 mu m. No improvement has been found in Jth (933 A cm-2) or T0 (47 K) in the case of the strained structure, despite the expected band structure modification.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 4.7 K; Ga 0.3In 0.7As quantum wells; MOVPE; band structure modification; broad-area lasers; current injection; strained quantum well laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890394
  • Filename
    19791
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=861362